Quasiballistic, nonequilibrium electron distribution in inhomogeneous semiconductor structures

Nonequilibrium spin distribution in single-electron transistor

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio δ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins...

Nonequilibrium spin distribution in a single-electron transistor

Single-electron transistor with ferromagnetic outer electrodes and a nonmagnetic island is studied theoretically. Nonequilibrium electron-spin distribution in the island is caused by tunneling current. The dependences of the magnetoresistance ratio d on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spin...

Intrasubband and Intersubband Electron Relaxation in Semiconductor Quantum Wire Structures

We calculate the intersubband and intrasubband many-body inelastic Coulomb scattering rates due to electron-electron interaction in two-subband semiconductor quantum wire structures. We analyze our relaxation rates in terms of contributions from interand intrasubband charge-density excitations separately. We show that the intersubband (intrasubband) charge-density excitations are primarily resp...

Inhomogeneous boundary effects in semiconductor quantum wires

Abslract Boundary effects play an essential role in determining the physical properties of semiconductor quantum wires. Additional features come into play when one considers inhomogeneous boundaries, i.e. wires whose widths are functions of distance along the length of the wire. We show that, in the adiabatic approximation (which assumes that the boundary patential fluctuation effects, or equiv...

Nonequilibrium photoinduced electron transfer